<b> <i>β</i> </b>-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching

$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by low-damage Ga flux etch that enables near-ideal forward operating characteristics independent fin orientation. The reverse breakdown greater than 5.10 MV/cm is demonstrated at voltage as 1.45 kV. This result demonstrates the potential for high-quality dielectric layers improved performance in vertical devices.